INSULATED-GATE BIPOLAR TRANSISTOR (IGBT) - AN OVERVIEW

The bottom P+ layer inject holes into N- layer that is why it known as injector layer. although the N- layer is known as the drift region. Its thickness is proportional to voltage blocking ability. The P layer higher than is referred to as the body of IGBT. Punch-by way of IGBT: enables latest to circulation from collector to emitter only, not the